PSMN1R0-30YLD

Specifications

Drainsource On Resistancemax

0.0013 Ω

Part Life Cycle Code

Transferred

Ds Breakdown Voltagemin

30 V

Polaritychannel Type

N-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating Eas

1588 mJ

Additional Feature

HIGH RELIABILITY

Ihs Manufacturer

NXP SEMICONDUCTORS

Reference Standard

IEC-60134

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

unknown

Jedec95 Code

MO-235

Operating Mode

ENHANCEMENT MODE

Package Style

SMALL OUTLINE

Pulsed Drain Currentmax Idm

1441 A

Package Description

SOP-8, 4 PIN

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Case Connection

DRAIN

Yüzey Montaj

YES

Jesd30 Code

R-PSSO-G4

Number Of Elements

1

Number Of Terminals

4

Package Shape

RECTANGULAR

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Id

100 A

ECCN Kodu

EAR99

Terminal Formu

GULL WING