PSMN045-80YS

Specifications

Terminal Kaplaması

Tin (Sn)

ECCN Kodu

EAR99

Pin Sayısı

235

Terminal Formu

GULL WING

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Id

24 A

Package Shape

RECTANGULAR

Operating Temperaturemax

175 °C

Number Of Terminals

4

JESD-609 Kodu

e3

Saturation Current

1

Jesd30 Code

R-PSSO-G4

Yüzey Montaj

YES

Case Connection

DRAIN

Transistor Application

SWITCHING

Package Body Material

PLASTIC/EPOXY

Pulsed Drain Currentmax Idm

86 A

Tepe Reflow Süresi (maks. sn)

30

Package Style

SMALL OUTLINE

Package Description

PLASTIC, LFPAK-4

Exterior Housing Material

1

Rohs Code

Yes

Tepe Reflow Sıcaklığı (°C)

260

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

not_compliant

Jedec95 Code

MO-235

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Ihs Manufacturer

NXP SEMICONDUCTORS

Avalanche Energy Rating Eas

18 mJ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ds Breakdown Voltagemin

80 V

Polaritychannel Type

N-CHANNEL

Part Life Cycle Code

Transferred

Drainsource On Resistancemax

0.045 Ω