PSMN012-60YS

Specifications

Terminal Kaplaması

Tin (Sn)

ECCN Kodu

EAR99

Pin Sayısı

235

Terminal Formu

GULL WING

Package Shape

RECTANGULAR

Power Dissipationmax Abs

89 W

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Id

59 A

Operating Temperaturemax

175 °C

Number Of Terminals

4

JESD-609 Kodu

e3

Saturation Current

1

Case Connection

DRAIN

Yüzey Montaj

YES

Jesd30 Code

R-PSSO-G4

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Exterior Housing Material

1

Package Style

SMALL OUTLINE

Tepe Reflow Süresi (maks. sn)

30

Pulsed Drain Currentmax Idm

236 A

Package Description

PLASTIC, LFPAK-4

Rohs Code

Yes

Tepe Reflow Sıcaklığı (°C)

260

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

not_compliant

Jedec95 Code

MO-235

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Ihs Manufacturer

NXP SEMICONDUCTORS

Qualification Status

Not Qualified

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating Eas

71 mJ

Ds Breakdown Voltagemin

60 V

Polaritychannel Type

N-CHANNEL

Drainsource On Resistancemax

0.0111 Ω

Part Life Cycle Code

Transferred