PMGD175XNE

Specifications

Terminal Pozisyonu

DUAL

Drainsource On Resistancemax

0.252 Ω

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Polaritychannel Type

N-CHANNEL

Operating Mode

ENHANCEMENT MODE

Package Style

SMALL OUTLINE

Terminal Formu

GULL WING

Date Of Intro

2016-04-15

Ihs Manufacturer

NXP SEMICONDUCTORS

Reference Standard

IEC-60134

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package Shape

RECTANGULAR

ECCN Kodu

EAR99

Terminal Kaplaması

TIN

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

30

Ds Breakdown Voltagemin

30 V

Yüzey Montaj

YES

JESD-609 Kodu

e3

Part Life Cycle Code

Transferred

Rohs Code

Yes

Number Of Terminals

6

Package Description

SC-88, TSSOP-6,6 PIN

Number Of Elements

2

Drain Currentmax Id

0.87 A

Tepe Reflow Sıcaklığı (°C)

260

REACH Uyumluluk Kodu

unknown

Jesd30 Code

R-PDSO-G6