PMDXB600UNE

Specifications

Polaritychannel Type

N-CHANNEL

Moisture Sensitivity Levels

1

JESD-609 Kodu

e3

Rohs Code

Yes

Reference Standard

IEC-60134

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

30

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Package Description

SMALL OUTLINE, R-PDSO-N6

REACH Uyumluluk Kodu

compliant

Package Body Material

PLASTIC/EPOXY

Package Style

SMALL OUTLINE

Terminal Pozisyonu

DUAL

Drain Currentmax Id

0.6 A

Terminal Kaplaması

TIN

Number Of Elements

2

Transistor Application

SWITCHING

Part Life Cycle Code

Transferred

Yüzey Montaj

YES

Jesd30 Code

R-PDSO-N6

Ihs Manufacturer

NXP SEMICONDUCTORS

Tepe Reflow Sıcaklığı (°C)

260

Number Of Terminals

6

Ds Breakdown Voltagemin

20 V

Terminal Formu

NO LEAD

Package Shape

RECTANGULAR

Drainsource On Resistancemax

0.62 Ω