PHP10N10E

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Turnon Timemax Ton

54 ns

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL

Drain Currentmax Id

11 A

Feedback Capmax Crss

50 pF

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

100 V

Power Dissipation Ambientmax

60 W

Operating Temperaturemax

175 °C

Number Of Terminals

3

Yüzey Montaj

NO

Terminal Formu

THROUGH-HOLE

Case Connection

DRAIN

Avalanche Energy Rating Eas

35 mJ

HTS Kodu

8541.29.00.95

Pin Sayısı

3

REACH Uyumluluk Kodu

unknown

Drainsource On Resistancemax

0.25 Ω

Package Style

FLANGE MOUNT

Jesd30 Code

R-PSFM-T3

Jedec95 Code

TO-220AB

Power Dissipationmax Abs

60 W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Turnoff Timemax Toff

85 ns

Ihs Manufacturer

NXP SEMICONDUCTORS

Package Description

FLANGE MOUNT, R-PSFM-T3

Number Of Elements

1

Additional Feature

AVALANCHE RATED

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Rohs Code

No

Pulsed Drain Currentmax Idm

44 A

Part Package Code

TO-220AB

ECCN Kodu

EAR99

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Transistor Application

SWITCHING

JESD-609 Kodu

e0

Terminal Pozisyonu

SINGLE