PHD50N06LT/T3

Specifications

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

55 V

Ihs Manufacturer

NXP SEMICONDUCTORS

Jesd30 Code

R-PSSO-G2

Case Connection

DRAIN

Package Style

SMALL OUTLINE

Terminal Pozisyonu

SINGLE

Terminal Formu

GULL WING

Package Description

SMALL OUTLINE, R-PSSO-G2

Qualification Status

Not Qualified

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

unknown

Number Of Elements

1

Pulsed Drain Currentmax Idm

200 A

ECCN Kodu

EAR99

Avalanche Energy Rating Eas

80 mJ

Polaritychannel Type

N-CHANNEL

Number Of Terminals

2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Shape

RECTANGULAR

Drain Currentmax Id

50 A

Package Body Material

PLASTIC/EPOXY

Drainsource On Resistancemax

0.024 Ω

Yüzey Montaj

YES

Part Life Cycle Code

Obsolete

Operating Mode

ENHANCEMENT MODE

Additional Feature

LOGIC LEVEL COMPATIBLE