PHB11N03LT

Specifications

Polaritychannel Type

N-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Package Style

SMALL OUTLINE

Number Of Terminals

2

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Formu

GULL WING

Part Life Cycle Code

Obsolete

Additional Feature

LOGIC LEVEL COMPATIBLE

Pulsed Drain Currentmax Idm

41 A

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Drain Currentmax Id

10.3 A

Package Description

PLASTIC, D2PAK-3

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

30 V

Drainsource On Resistancemax

0.15 Ω

Transistor Element Material

SILICON

JESD-609 Kodu

e0

Power Dissipationmax Abs

33 W

Jesd30 Code

R-PSSO-G2

Operating Temperaturemax

175 °C

Rohs Code

No

Yüzey Montaj

YES

Package Body Material

PLASTIC/EPOXY

REACH Uyumluluk Kodu

compliant

Number Of Elements

1

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Ihs Manufacturer

NXP SEMICONDUCTORS

Pin Sayısı

3

Avalanche Energy Rating Eas

25 mJ

Package Shape

RECTANGULAR