MRF8P9300HSR6

Specifications

Current Test

2.4A

Yayın Yılı

2006

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Temel Parça No

MRF8P9300

Drain To Source Breakdown Voltage

70 V

Voltage Rating

70 V

RoHS

Compliant

Fabrika Tedarik Süresi

10 Weeks

ECCN Kodu

EAR99

Gain

19.4 dB

Test Current

2.4 A

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

70V

Parça Durumu

Last Time Buy

Weight

8.518238 g

Nem Hassasiyeti (MSL)

Not Applicable

Jesd30 Code

R-CDFP-F4

Montaj

Surface Mount

Voltage Test

28V

Polaritychannel Type

N-CHANNEL

Yüzey Montaj

YES

Terminal Sayısı

4

Nominal Gerilim

70V

Case Connection

SOURCE

Tepe Reflow Süresi (maks. sn)

40

Max Frequency

960 MHz

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Element Configuration

Single

Radyasyon Dayanımı

No

Transistor Application

AMPLIFIER

Drain To Source Voltage Vdss

70 V

Transistor Type

LDMOS (Dual)

Operating Temperature Max

225°C

Pin Sayısı

5

Tepe Reflow Sıcaklığı (°C)

260

Test Voltage

28 V

Terminal Formu

FLAT

Gate To Source Voltage Vgs

10 V