MRF6V2150NBR1

Specifications

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

110V

Parça Durumu

Not For New Designs

Nem Hassasiyeti (MSL)

3 (168 Hours)

Weight

1.911098 g

Gain

25 dB

Test Current

450 mA

Qualification Status

Not Qualified

Drain To Source Breakdown Voltage

110 V

Voltage Rating

110 V

RoHS

Compliant

Fabrika Tedarik Süresi

10 Weeks

ECCN Kodu

EAR99

Yayın Yılı

2006

Current Test

450mA

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Temel Parça No

MRF6V2150

Kurşunsuz

Contains Lead

Continuous Drain Current Id

2.5 mA

JESD-609 Kodu

e3

Nominal Gerilim

110V

Case Connection

SOURCE

Yüzey Montaj

YES

Terminal Sayısı

4

Jesd30 Code

R-PDFM-F4

Montaj

Screw, Surface Mount

Voltage Test

50V

Polaritychannel Type

N-CHANNEL

Tepe Reflow Sıcaklığı (°C)

260

Test Voltage

50 V

Terminal Pozisyonu

DUAL

Terminal Formu

FLAT

Gate To Source Voltage Vgs

12 V

Transistor Application

AMPLIFIER

Transistor Type

LDMOS

Drain To Source Voltage Vdss

110 V

Operating Temperature Max

225°C

Tepe Reflow Süresi (maks. sn)

40

Max Frequency

450 MHz