MRF101AN

Specifications

Schedule B

8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Junction Temperature Tj

175 °C

Parça Durumu

Active

Fabrika Tedarik Süresi

12 Weeks

Nominal Gerilim

133V

Voltage Test

50V

Current Rating Amps

10μA

Kılıf / Paket

TO-220-3

Transistor Type

LDMOS

Drain To Source Voltage Vdss

133 V

Frekans

1.8MHz~250MHz

RoHS

Compliant

Power Dissipation

182 W

Maks. Çalışma Sıcaklığı

175 °C

Yükseklik

19.91 mm

Current Test

100mA

Number Of Channels

1

Min. Çalışma Sıcaklığı

-40 °C

Drain To Source Breakdown Voltage

133 V

Usage Level

Automotive grade

Gate To Source Voltage Vgs

10 V

Gain

21.1dB

Power Output

115W