BUK9Y41-80E

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Polaritychannel Type

N-CHANNEL

Avalanche Energy Rating Eas

25 mJ

Pulsed Drain Currentmax Idm

96 A

Rated Current

2 A

Operating Mode

ENHANCEMENT MODE

Gross Weight

24.67

Number Of Switching Cycles Electrical

200000 min

Additional Feature

AVALANCHE RATED

Kind Of Integrated Circuit

PWM controller

Case Connection

DRAIN

Frekans

0.5MHz

Housing Material

nickel-plated brass

Moisture Sensitivity Levels

1

Type Of Integrated Circuit

PMIC

Switch Type

GQ19 series vandal proof button without illumination

Contacts

2NO

Transport Packaging Sizequantity

62*27.5*28/300

Mounting

SMD

ECCN Kodu

EAR99

Ihs Manufacturer

NXP SEMICONDUCTORS

Number Of Terminals

4

Terminal Pozisyonu

SINGLE

Kind Of Package

reel,

Terminal Kaplaması

PURE TIN

REACH Uyumluluk Kodu

unknown

Package Body Material

PLASTIC/EPOXY

Terminal Formu

GULL WING

Yüzey Montaj

YES

Operating Temperature Range

-25…+55 °C

Ds Breakdown Voltagemin

80 V

Exterior Housing Material

1

Çalışma Sıcaklığı

0...70°C

Tepe Reflow Sıcaklığı (°C)

260

Reference Standard

AEC-Q101; IEC-60134

Rohs Code

Yes

Output Current

1A

Switching Scheme

OFF-ON with fixation

Insulation Resistance

1000 MOhm min

Saturation Current

1