BUK9M24-60E

Specifications

Package Shape

RECTANGULAR

Tepe Reflow Süresi (maks. sn)

30

JESD-609 Kodu

e3

Case Connection

DRAIN

Part Life Cycle Code

Transferred

Jesd30 Code

R-PSSO-G4

Transistor Application

SWITCHING

Rohs Code

Yes

Pulsed Drain Currentmax Idm

127 A

Operating Mode

ENHANCEMENT MODE

Saturation Current

1

Drainsource On Resistancemax

0.024 Ω

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Date Of Intro

2016-05-16

Tepe Reflow Sıcaklığı (°C)

260

Polaritychannel Type

N-CHANNEL

Avalanche Energy Rating Eas

23.9 mJ

Reference Standard

AEC-Q101; IEC-60134

Terminal Formu

GULL WING

Yüzey Montaj

YES

Ds Breakdown Voltagemin

60 V

Exterior Housing Material

1

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

TIN

REACH Uyumluluk Kodu

unknown

Package Body Material

PLASTIC/EPOXY

ECCN Kodu

EAR99

Drain Currentmax Id

32 A

Ihs Manufacturer

NXP SEMICONDUCTORS

Number Of Terminals

4

Package Style

SMALL OUTLINE