BUK7M10-40E

Specifications

Package Body Material

PLASTIC/EPOXY

REACH Uyumluluk Kodu

unknown

Terminal Kaplaması

TIN

Terminal Pozisyonu

SINGLE

Configuration

SINGLE WITH BUILT-IN DIODE

Package Style

SMALL OUTLINE

Number Of Terminals

4

Drain Currentmax Id

56 A

ECCN Kodu

EAR99

Ihs Manufacturer

NXP SEMICONDUCTORS

Exterior Housing Material

1

Ds Breakdown Voltagemin

40 V

Yüzey Montaj

YES

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Saturation Current

1

Drainsource On Resistancemax

0.01 Ω

Pulsed Drain Currentmax Idm

224 A

Rohs Code

Yes

Reference Standard

AEC-Q101; IEC-60134

Avalanche Energy Rating Eas

30.6 mJ

Tepe Reflow Sıcaklığı (°C)

260

Polaritychannel Type

N-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Date Of Intro

2016-05-13

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

30

Package Shape

RECTANGULAR

Jesd30 Code

R-PSSO-G4

Transistor Application

SWITCHING

Case Connection

DRAIN

Part Life Cycle Code

Transferred

Package Description

,