BLP7G22-10

Specifications

Minimum Operating Temperature C

-65

Configuration

Single

Minimum Frequency Mhz

700

Pcb Changed

12

Maximum Drain Source Resistance Mohm

1000(Typ)@6.05V

Mode Of Operation

1-Carrier W-CDMA|Pulsed CW|2-Carrier W-CDMA

Military

No

Maximum Vswr

10

Maximum Drain Source Voltage V

65

Parça Durumu

Active

Maximum Gate Threshold Voltage V

2.3

Output Power W

2(Typ)

RoHS Durumu

RoHS Compliant

Channel Mode

Enhancement

Maximum Gate Source Voltage V

13

Part Life Cycle Code

Transferred

Maximum Idss Ua

1.4

Pin Sayısı

12

Typical Drain Efficiency

23

Process Technology

LDMOS

Supplier Package

HVSON EP

Maximum Operating Temperature C

150

Üretici Parça No

BLP7G22-10

Tepe Reflow Sıcaklığı (°C)

260

Package Width

4

Moisture Sensitivity Levels

3

Ihs Manufacturer

NXP SEMICONDUCTORS

Typical Power Gain Db

16

Number Of Elements Per Chip

1

Typical Forward Transconductance S

0.16

Eccn Us

EAR99

Package Length

6

Risk Rank

5.69

Mounting

Surface Mount

Maximum Frequency Mhz

2700

Maximum Gate Source Leakage Current Na

140

Tepe Reflow Süresi (maks. sn)

30

Package Height

0.82

REACH Uyumluluk Kodu

unknown

Rohs Code

Yes