BLF6G27LS-40P

Specifications

Reflow Temperaturemax S

NOT SPECIFIED

Maximum Drain Source Resistance Mohm

360(Typ)@6.15V

Transistor Element Material

SILICON

Number Of Terminals

4

Risk Rank

5.72

Typical Drain Efficiency

30

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Package Description

FLATPACK, R-CDFP-F4

Pcb Changed

5

Maximum Gate Source Voltage V

13

Maximum Vswr

10

Output Power W

20(Typ)

Mode Of Operation

1-Carrier W-CDMA|IS-95

RoHS Durumu

RoHS Compliant

Number Of Elements Per Chip

2

Terminal Pozisyonu

DUAL

Minimum Frequency Mhz

2500

Eccn Us

EAR99

Polaritychannel Type

N-CHANNEL

Typical Power Gain Db

17.5

Maximum Continuous Drain Current A

15.5

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

65 V

Channel Mode

Enhancement

Ihs Manufacturer

NXP SEMICONDUCTORS

Mounting

Surface Mount

Highest Frequency Band

S BAND

Process Technology

LDMOS

Drain Currentmax Id

15.5 A

Maximum Drain Source Voltage V

65

Üretici Parça No

BLF6G27LS-40P

Package Shape

RECTANGULAR

Maximum Operating Temperature C

225

Case Connection

SOURCE

Configuration

Dual Common Source

ECCN Kodu

EAR99

Rohs Code

Yes

Package Width

9.91(Max)

Maximum Frequency Mhz

2700