BLF6G20-45

Specifications

Polaritychannel Type

N-CHANNEL

Typical Power Gain Db

19.2

Operating Mode

ENHANCEMENT MODE

Maximum Continuous Drain Current A

13

Ds Breakdown Voltagemin

65 V

Aec Qualified

Unknown

Output Power W

2.5(Typ)

Mode Of Operation

2-Carrier W-CDMA

RoHS Durumu

RoHS Compliant

Terminal Pozisyonu

DUAL

Number Of Elements Per Chip

1

Eccn Us

EAR99

Minimum Frequency Mhz

1805

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Pcb Changed

3

Package Description

ROHS COMPLIANT, CERAMIC PACKAGE-2

Maximum Gate Source Voltage V

13

Maximum Vswr

10

Maximum Drain Source Resistance Mohm

200(Typ)@6.15V

Operating Temperaturemax

150 °C

Reflow Temperaturemax S

NOT SPECIFIED

Transistor Element Material

SILICON

Number Of Terminals

2

Typical Drain Efficiency

14

Risk Rank

5.68

Terminal Formu

FLAT

Pin Sayısı

3

Transistor Application

AMPLIFIER

REACH Uyumluluk Kodu

unknown

Military

No

Typical Forward Transconductance S

5

Part Life Cycle Code

Obsolete

Package Style

FLANGE MOUNT

Jesd30 Code

R-CDFM-F2

Parça Durumu

Obsolete

Package Length

20.45(Max)

Number Of Elements

1

Yüzey Montaj

YES

Channel Type

N