BLF647P

Specifications

Maximum Drain Source Voltage V

65

Package Height

4.75(Max)

Supplier Package

CDFM

Typical Output Capacitance Vds Pf

30@32V

Mode Of Operation

Class-AB|2-Tone Class-AB|Pulsed RF|CW Class-B

Maximum Frequency Mhz

1500

Maximum Vswr

10

Pin Sayısı

5

Package Length

34.16(Max)

Maximum Operating Temperature C

200

Configuration

Dual Common Source

Minimum Frequency Mhz

10

Channel Mode

Enhancement

Maximum Idss Ua

1.4

Military

No

Eccn Us

EAR99

Output Power W

200

Maximum Drain Source Resistance Mohm

140(Typ)@6.15V

Maximum Gate Threshold Voltage V

2.4

Process Technology

LDMOS

RoHS Durumu

RoHS Compliant

Parça Durumu

Active

Typical Power Gain Db

18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|19

Package Width

9.91(Max)

Channel Type

N

Typical Input Capacitance Vds Pf

78@32V

Number Of Elements Per Chip

2

Maximum Gate Source Voltage V

11

Maximum Gate Source Leakage Current Na

50

Mounting

Screw

Minimum Operating Temperature C

-65

Typical Reverse Transfer Capacitance Vds Pf

1.3@32V

Pcb Changed

5

Typical Drain Efficiency

70