BLF369,112

Specifications

Terminal Pozisyonu

DUAL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

REACH Uyumluluk Kodu

unknown

Package Height

6.3

Brand Name

NXP Semiconductor

Typical Output Capacitance Vds Pf

230@32V

Typical Forward Transconductance S

15

Pin Sayısı

5

Maximum Vswr

10

Maximum Frequency Mhz

500

Number Of Elements

2

Channel Mode

Enhancement

Minimum Frequency Mhz

10

Eccn Us

EAR99

Military

No

Polaritychannel Type

N-CHANNEL

Transistor Application

AMPLIFIER

Package Style

FLANGE MOUNT

Reflow Temperaturemax S

NOT SPECIFIED

Process Technology

LDMOS

Üretici Parça No

BLF369,112

Output Power W

500

Transistor Element Material

SILICON

Typical Input Capacitance Vds Pf

400@32V

Risk Rank

5.74

Maximum Gate Source Voltage V

13

Number Of Elements Per Chip

2

Number Of Terminals

4

Typical Drain Efficiency

60

Ds Breakdown Voltagemin

65 V

Pcb Changed

5

Minimum Operating Temperature C

-65

Mounting

Screw

Terminal Formu

FLAT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Operating Temperaturemax

200 °C

Rohs Code

Yes

Maximum Drain Source Voltage V

65

Supplier Package

LDMOST

Mode Of Operation

CW Class-AB|Pulsed RF Class-AB|2-Tone Class-AB