Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Risk Rank
- 5.81
- Typical Drain Efficiency
- 40
- Ds Breakdown Voltagemin
- 65 V
- Terminal Formu
- FLAT
- Mounting
- Screw
- Minimum Operating Temperature C
- -65
- Package Body Material
- CERAMIC, METAL-SEALED COFIRED
- Pcb Changed
- 5
- Number Of Elements Per Chip
- 2
- Maximum Gate Source Voltage V
- 13
- Number Of Terminals
- 4
- Reflow Temperaturemax S
- NOT SPECIFIED
- Package Style
- FLANGE MOUNT
- Üretici Parça No
- BLD6G22L-50
- RoHS
- Compliant
- Output Power W
- 8(Typ)
- Maximum Continuous Drain Current A
- 10.2
- Pin Sayısı
- 5
- Number Of Elements
- 2
- Maximum Vswr
- 10
- Maximum Frequency Mhz
- 2170
- Military
- No
- Eccn Us
- EAR99
- Transistor Application
- AMPLIFIER
- Polaritychannel Type
- N-CHANNEL
- Minimum Frequency Mhz
- 2110
- Channel Mode
- Enhancement
- Pin Sayısı
- 5
- Package Height
- 4.65(Max)
- REACH Uyumluluk Kodu
- unknown
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Pozisyonu
- DUAL
- Channel Type
- N
- Package Description
- FLANGE MOUNT, R-CDFM-F4
- Operating Mode
- ENHANCEMENT MODE
- Yüzey Montaj
- YES
- Package Shape
- RECTANGULAR
- Part Life Cycle Code
- Obsolete
- ECCN Kodu
- EAR99
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