BLA6G1011-200R,112

Specifications

Jesd30 Code

R-CDFM-F2

Pcb Changed

3

Typical Forward Transconductance S

18

Typical Power Gain Db

20

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Operating Temperature C

225

Package Width

9.91(Max)

Parça Durumu

NRND

Gain

20dB

Kılıf / Paket

SOT-502A

Yayın Yılı

2011

Maximum Vswr

10

Maximum Continuous Drain Current A

49

Terminal Formu

FLAT

Transistor Element Material

SILICON

Temel Parça No

BLA6G1011

Output Power W

200(Min)

Number Of Elements Per Chip

1

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Mounting

Screw

Frekans

1.03GHz~1.09GHz

Typical Fall Time Ns

6

Package Length

34.16(Max)

Number Of Elements

1

Minimum Frequency Mhz

1030

Case Connection

SOURCE

Voltage Test

28V

Maximum Drain Source Resistance Mohm

93@6.15V

Maximum Gate Source Voltage V

13

Maximum Drain Source Voltage V

65

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Package Height

4.72(Max)

Power Output

200W

Typical Reverse Transfer Capacitance Vds Pf

3@28V

Minimum Operating Temperature C

-65

Eccn Us

EAR99

REACH Uyumluluk Kodu

unknown

Typical Drain Efficiency

65

Maximum Frequency Mhz

1090