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BAV21,113

NXP Semiconductors

BAV21,113

RF Diodes

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Pin Sayısı
2
Yayın Yılı
2007
RoHS Durumu
Yes with exemptions
Terminal Kaplaması
Tin (Sn)
Seri
*
Çap
1.85(Max)
Forward Current
250mA
Eccn Us
EAR99
Peak Reverse Recovery Time Ns
50
Peak Forward Voltage V
1.25@0.2A
Hts
8541.10.00.80
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Power Dissipation Max
0.4W
Forward Voltage
1.2V
Voltage Forward Vf Max If
1.25V @ 200mA
Diode Type
Standard
Temel Ürün No
BAV2
Maximum Junction Ambient Thermal Resistance
375K/W
Fabrika Tedarik Süresi
6 Weeks
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature Max
175°C
Peak Reverse Repetitive Voltage V
250
Pcb Changed
2
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Reverse Recovery Time
50ns
Peak Reverse Current Ua
0.1
Paket
Bulk
Nem Hassasiyeti (MSL)
1 (Unlimited)
Capacitance Vr F
5pF @ 0V 1MHz
Maximum Dc Reverse Voltage V
200
HTS Kodu
8541.10.00.70
Kılıf / Paket
DO-204AH, DO-35, Axial
Supplier Package
ALF
Temel Parça No
BAV21
Current Average Rectified Io
250mA DC
Minimum Operating Temperature C
-65
Terminal Sayısı
2
Qualification Status
Not Qualified
Military
No
Diode Element Material
SILICON

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