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BAS86,115

NXP Semiconductors

BAS86,115

RF Diodes

In StockRoHS: Compliant

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

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Specifications

Terminal Formu
WRAP AROUND
HTS Kodu
8541.10.00.70
Peak Forward Voltage V
0.9@0.1A
Power Dissipation Max
0.3W
Fabrika Tedarik Süresi
6 Weeks
Number Of Elements
1
Voltage Dc Reverse Vr Max
50V
RoHS Durumu
Yes with exemptions
Forward Voltage
380mV
Maximum Operating Temperature C
125
Voltage Forward Vf Max If
900mV @ 100mA
Maximum Dc Reverse Voltage V
50
Minimum Operating Temperature C
-65
Reverse Recovery Time
4ns
Additional Feature
ULTRA HIGH SPEED SWITCH
Military
No
Terminal Sayısı
2
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Peak Nonrepetitive Surge Current A
5
Çap
1.6(Max)
Pin Sayısı
2
JESD-609 Kodu
e3
Peak Reverse Current Ua
5
Pcb Changed
2
Reverse Currentmax
5μA
Diode Element Material
SILICON
Parça Durumu
Active
Eccn Us
EAR99
Temel Parça No
BAS86
Speed
Small Signal =< 200mA (Io), Any Speed
ECCN Kodu
EAR99
Maximum Diode Capacitance Pf
8
Kılıf / Paket
DO-213AC, MINI-MELF, SOD-80
Pin Sayısı
2
Operating Temperature Junction
125°C Max
Mounting
Surface Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)
Diode Type
Schottky
Tip
Schottky Diode

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