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BAS516,115

NXP Semiconductors

BAS516,115

RF Diodes

In StockRoHS: Compliant

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Compliant

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Specifications

Kılıf / Paket
SC-79, SOD-523
Terminal Formu
FLAT
Max Power Dissipation
500 W
Maximum Continuous Forward Current A
0.25
Montaj Tipi
Surface Mount
Yüzey Montaj
YES
Package Height
0.65(Max)
HTS Kodu
8541.10.00.70
Montaj
Surface Mount
Peak Nonrepetitive Surge Current A
4
Gerilim
100 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Peak Nonrepetitive Surge Current
4 A
ECCN Kodu
EAR99
Operating Temperature Junction
150°C Max
Maximum Dc Reverse Voltage V
100
Max Reverse Leakage Current
1 µA
Pin Sayısı
2
Configuration
Single
Hts
8541.10.00.80
Power Dissipation Max
0.5W
JESD-609 Kodu
e3
Max Forward Surge Current Ifsm
4 A
Diode Type
Standard
Akım
2 A
Peak Reverse Recovery Time Ns
4
Terminal Pozisyonu
DUAL
Uzunluk
1.25 mm
Maks. Çalışma Sıcaklığı
150 °C
Diode Element Material
SILICON
Peak Forward Voltage V
1.25@0.15A
Qualification Status
Not Qualified
Max Junction Temperature Tj
150°C
Peak Reverse Current Ua
0.5@80V
Capacitance Vr F
1pF @ 0V 1MHz
Reach Svhc
No SVHC
Pcb Changed
2
Forward Voltage
1.25 V
Peak Reverse Current
500 nA
Tip
Switching Diode

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