PMDXB600UNELZ

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Power Max

380mW

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

4 Weeks

Montaj

Surface Mount

Ürün Durumu

Active

Reference Standard

IEC-60134

Maks. Oturma Yüksekliği

0.035 (0.89mm)

Fet Type

2 N-Channel (Dual)

Composition

Metal Element

Jesd30 Code

R-PDSO-N6

Tolerans

±0.5%

Rds On Max Id Vgs

620m Ω @ 600mA, 4.5V

Terminal Formu

NO LEAD

Case Connection

DRAIN

Fet Feature

Standard

Direnç

10 mOhms

Drain Currentmax Abs Id

0.6A

Operating Mode

ENHANCEMENT MODE

Tedarikçi Cihaz Paketi

2816

Paket

Bulk

Çalışma Sıcaklığı

-65°C ~ 170°C

Terminal Sayısı

2

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

600mA

Gate Charge Qg Max Vgs

0.7nC @ 4.5V

Kılıf / Paket

Nonstandard

Drain To Source Voltage Vdss

20V

Seri

WSL

Temperature Coefficient

±75ppm/°C

Özellikler

Automotive AEC-Q200, Current Sense, Moisture Resistant, Pulse Withstanding

Montaj Tipi

Surface Mount

Max Power Dissipation

380mW

Vgsth Max Id

950mV @ 250μA

Yayın Yılı

2015