PMDPB95XNE2X

Specifications

Drain Currentmax Abs Id

2.7A

Fet Feature

Standard

Case Connection

DRAIN

Channel Type

Dual N

Input Capacitance Ciss Max Vds

258pF @ 15V

Paket

Bulk

Current Continuous Drain Id25

2.7A Ta

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Number Of Elements

2

Jesd30 Code

S-PDSO-N6

Yüzey Montaj

YES

Rds On Max Id Vgs

99m Ω @ 2.8A, 4.5V

Ds Breakdown Voltagemin

30V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

NO LEAD

Pin Sayısı

6

Drainsource On Resistancemax

0.099Ohm

Seri

*

Drain To Source Voltage Vdss

30V

Montaj Tipi

Surface Mount

Reference Standard

IEC-60134

Ürün Durumu

Active

Yayın Yılı

2016

Fet Type

2 N-Channel (Dual)

Vgsth Max Id

1.25V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Power Max

510mW Ta

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

8 Weeks

Parça Durumu

Active

Gate Charge Qg Max Vgs

4.5nC @ 4.5V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

6-UDFN Exposed Pad