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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- SOT-1205, 8-LFPAK56
- Gate Charge Qg Max Vgs
- 25.9nC @ 10V
- Power Max
- 53W
- Fabrika Tedarik Süresi
- 12 Weeks
- Max Power Dissipation
- 53W
- Terminal Sayısı
- 6
- Number Of Elements
- 2
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2015
- Parça Durumu
- Active
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- 2 N-Channel (Dual)
- Montaj
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Paket
- Bulk
- Ds Breakdown Voltagemin
- 100V
- Input Capacitance Ciss Max Vds
- 1533pF @ 25V
- Rds On Max Id Vgs
- 37.6mOhm @ 5A, 10V
- Continuous Drain Current Id
- 21.4A
- Drain To Source Voltage Vdss
- 100V
- Terminal Formu
- GULL WING
- Reference Standard
- AEC-Q101; IEC-60134
- Avalanche Energy Rating Eas
- 46 mJ
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Tedarikçi Cihaz Paketi
- LFPAK56D
- Current Continuous Drain Id25
- 21.4A
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C ~ 175°C (TJ)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.0376Ohm
- Pin Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Ürün Durumu
- Active
- Transistor Application
- SWITCHING
- Pin Sayısı
- 8
- Jesd30 Code
- R-PDSO-G6
- Case Connection
- DRAIN
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