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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- SOT-1205, 8-LFPAK56
- RoHS Durumu
- ROHS3 Compliant
- Number Of Elements
- 2
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Terminal Sayısı
- 6
- Power Max
- 64W
- Fabrika Tedarik Süresi
- 12 Weeks
- Max Power Dissipation
- 64W
- Gate Charge Qg Max Vgs
- 34nC @ 10V
- Montaj
- Surface Mount
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- 2 N-Channel (Dual)
- Parça Durumu
- Active
- Yayın Yılı
- 2013
- Transistor Element Material
- SILICON
- Terminal Formu
- GULL WING
- Drain To Source Voltage Vdss
- 100V
- Continuous Drain Current Id
- 29A
- Rds On Max Id Vgs
- 27.5mOhm @ 5A, 10V
- Input Capacitance Ciss Max Vds
- 2137pF @ 25V
- Ds Breakdown Voltagemin
- 100V
- Paket
- Bulk
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C ~ 175°C (TJ)
- Current Continuous Drain Id25
- 29A
- Tedarikçi Cihaz Paketi
- LFPAK56D
- Avalanche Energy Rating Eas
- 67 mJ
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Reference Standard
- AEC-Q101; IEC-60134
- Pulsed Drain Currentmax Idm
- 116A
- Ürün Durumu
- Active
- Operating Mode
- ENHANCEMENT MODE
- Drainsource On Resistancemax
- 0.0275Ohm
- Pin Sayısı
- 8
- Ambalaj
- Tape & Reel (TR)
- Case Connection
- DRAIN
- Jesd30 Code
- R-PDSO-G6
- Transistor Application
- SWITCHING
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