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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tip
- RF Power MOSFET
- Montaj Stili
- SMD/SMT
- Kılıf / Paket
- DFN-6
- Technology
- GaN Si
- Vds Drainsource Breakdown Voltage
- 125 V
- Maks. Çalışma Sıcaklığı
- + 150 C
- Fabrika Paket Adedi
- 5000
- Id Continuous Drain Current
- 17 mA
- Minimum Operating Temperature
- - 55 C
- Vgs Th Gatesource Threshold Voltage
- - 3.3 V
- Part Aliases
- 935432677528
- Number Of Channels
- 1 Channel
- Operating Frequency
- 2496 MHz to 2690 MHz
- Vgs Gatesource Voltage
- - 8 V
- Ambalaj
- Reel
- Output Power
- 27 dBm
- RoHS
- Details
- Seri
- A5G26S008N
- Transistor Polarity
- N-Channel
- Gain
- 18.4 dB
- Ürün Tipi
- RF MOSFET Transistors
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