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C3 ChipZentronix

NTE ELECT

NTE10

RF BJT Transistors

RoHS: Compliant

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Specifications

Dc Current Gain
40
Tip
NPN
Power Dissipation
0.5(W)
Emitterbase Voltage
3(V)
Üretici Parça No
NTE10
Number Of Elements
1
Power Gain
14(dB)
Configuration
Single
Package Type
TO-92
Operating Temp Range
-55C to 150C
Collectorbase Voltage
20(V)
Collector Current Dc
0.7(A)

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