PUMH15,115

Specifications

Jesd30 Code

R-PDSO-G6

Current Collector Cutoff Max

1μA

Terminal Kaplaması

Tin (Sn)

Operating Temperature Max

150°C

RoHS Durumu

ROHS3 Compliant

Resistor Base R1

4.7k Ω

Yüzey Montaj

YES

Currentcollector Ic Max

100mA

Fabrika Tedarik Süresi

4 Weeks

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Yayın Yılı

2011

Terminal Sayısı

6

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transistor Element Material

SILICON

Number Of Elements

2

Power Max

300mW

Tepe Reflow Süresi (maks. sn)

40

Dc Current Gain Hfe Min Ic Vce

30 @ 10mA 5V

Polaritychannel Type

NPN

Voltage Collector Emitter Breakdown Max

50V

JESD-609 Kodu

e3

Additional Feature

BUILT IN BIAS RESISTOR RATIO 1

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Type

2 NPN - Pre-Biased (Dual)

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

ECCN Kodu

EAR99

Resistor Emitter Base R2

4.7k Ω

Qualification Status

Not Qualified

Pin Sayısı

6

Tepe Reflow Sıcaklığı (°C)

260