Volume pricing
- 1+ pcs$0.05
- 500+ pcs$0.04
- 1000+ pcs$0.03
- 2000+ pcs$0.03
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Collector Emitter Breakdown Max
- 50V 40V
- JESD-609 Kodu
- e3
- Additional Feature
- BUILT-IN BIAS RESISTOR RATIO IS 2.1
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Type
- 1 NPN Pre-Biased, 1 PNP
- Frequency Transition
- 100MHz
- Tepe Reflow Süresi (maks. sn)
- 40
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 5mA 5V / 120 @ 1mA 6V
- Polaritychannel Type
- NPN AND PNP
- ECCN Kodu
- EAR99
- Resistor Emitter Base R2
- 47k Ω
- Qualification Status
- Not Qualified
- Pin Sayısı
- 6
- Tepe Reflow Sıcaklığı (°C)
- 260
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Vce Saturation Max Ib Ic
- 150mV @ 500μA, 10mA / 200mV @ 5mA, 50mA
- Transition Frequency
- 100MHz
- Current Collector Cutoff Max
- 1μA
- Terminal Kaplaması
- Tin (Sn)
- Operating Temperature Max
- 150°C
- RoHS Durumu
- ROHS3 Compliant
- Resistor Base R1
- 22k Ω
- Yüzey Montaj
- YES
- Terminal Pozisyonu
- DUAL
- Jesd30 Code
- R-PDSO-G6
- Terminal Sayısı
- 6
- Yayın Yılı
- 2009
- Terminal Formu
- GULL WING
- Transistor Application
- SWITCHING
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power Max
- 300mW
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Currentcollector Ic Max
- 100mA
- Fabrika Tedarik Süresi
- 4 Weeks
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
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