PUMD10,115

Specifications

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

Pin Sayısı

6

HTS Kodu

8541.21.00.95

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Qualification Status

Not Qualified

Pin Sayısı

6

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99

Resistor Emitter Base R2

47k Ω

Dc Current Gain Hfe Min Ic Vce

100 @ 10mA 5V

Frequency Transition

230MHz

Tepe Reflow Süresi (maks. sn)

40

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Voltage Collector Emitter Breakdown Max

50V

JESD-609 Kodu

e3

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 21

Montaj Tipi

Surface Mount

Currentcollector Ic Max

100mA

Fabrika Tedarik Süresi

4 Weeks

Temel Parça No

MD10

Ambalaj

Tape & Reel (TR)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Polarity

NPN, PNP

Transistor Element Material

SILICON

Number Of Elements

2

Power Max

300mW

Yayın Yılı

2003

Terminal Sayısı

6

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Operating Temperature Max

150°C

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Resistor Base R1

2.2k Ω

Transition Frequency

230MHz

Current Collector Cutoff Max

100nA ICBO

Terminal Kaplaması

Tin (Sn)