Volume pricing
- 1+ pcs$0.16
- 10+ pcs$0.15
- 100+ pcs$0.15
- 500+ pcs$0.14
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 230mW
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 6
- Pin Sayısı
- 6
- Vce Saturation Max Ib Ic
- 150mV @ 500μA, 10mA
- Transistor Application
- SWITCHING
- Parça Durumu
- Active
- Yayın Yılı
- 2015
- Transition Frequency
- 230MHz
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Max
- 230mW
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 5mA 5V
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 2
- Resistor Base R1
- 47k Ω
- Montaj
- Surface Mount
- Collector Emitter Voltage Vceo
- 150mV
- Resistor Emitter Base R2
- 47k Ω
- Jesd30 Code
- R-PDSO-N6
- Reference Standard
- AEC-Q101; IEC-60134
- Fabrika Tedarik Süresi
- 4 Weeks
- Terminal Formu
- NO LEAD
- Montaj Tipi
- Surface Mount
- Current Collector Cutoff Max
- 1μA
- Case Connection
- COLLECTOR
- Frequency Transition
- 230MHz
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Max Collector Current
- 100mA
- Additional Feature
- BUILT IN BIAS RESISTANCE RATIO IS 1
- Seri
- Automotive, AEC-Q101
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- Polaritychannel Type
- NPN
- Collectoremitter Breakdown Voltage
- 50V
- Kılıf / Paket
- 6-XFDFN Exposed Pad
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