PQMD3Z

Specifications

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Polaritychannel Type

NPN AND PNP

Collectoremitter Breakdown Voltage

50V

Kılıf / Paket

6-XFDFN Exposed Pad

Max Collector Current

100mA

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Seri

Automotive, AEC-Q101

Current Collector Cutoff Max

1μA

Case Connection

COLLECTOR

Frequency Transition

230MHz 180MHz

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Terminal Formu

NO LEAD

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Number Of Elements

2

Resistor Base R1

10k Ω

Montaj

Surface Mount

Collector Emitter Voltage Vceo

150mV

Resistor Emitter Base R2

10k Ω

Fabrika Tedarik Süresi

4 Weeks

Reference Standard

AEC-Q101; IEC-60134

Jesd30 Code

R-PDSO-N6

Transition Frequency

230MHz

Parça Durumu

Active

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Max

230mW

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Dc Current Gain Hfe Min Ic Vce

30 @ 5mA 5V

Pin Sayısı

6

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

Transistor Application

SWITCHING

Max Power Dissipation

230mW

Terminal Sayısı

6

RoHS Durumu

ROHS3 Compliant