PQMD2Z

Specifications

Continuous Collector Current

100

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

Operating Pressure

5801.51PSI (40000kPa)

Max Power Dissipation

230mW

Number Of Elements

2

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Fabrika Tedarik Süresi

4 Weeks

Resistor Emitter Base R2

22k Ω

Transistor Element Material

SILICON

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-25°C ~ 80°C

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Max

230mW

Dc Current Gain Hfe Min Ic Vce

60 @ 5mA 5V

Current Collector Cutoff Max

1μA

Çıkış Tipi

PNP

Besleme Gerilimi

9.6V ~ 32V

Frequency Transition

230MHz 180MHz

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Paket

Box

Montaj Tipi

Surface Mount

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Collectoremitter Breakdown Voltage

50V

Max Collector Current

100mA

Pin Sayısı

6

Transistor Application

SWITCHING

Maximum Pressure

8702.26PSI (60000kPa)

Terminal Sayısı

6

RoHS Durumu

ROHS3 Compliant

Resistor Base R1

22k Ω

Ürün Durumu

Active

Collector Emitter Voltage Vceo

150mV

Jesd30 Code

R-PDSO-N6

Reference Standard

AEC-Q101; IEC-60134

Transition Frequency

230MHz

Case Connection

COLLECTOR

Port Size

Male - 1/4 (6.35mm) NPT

Applications

Industrial Automation