PQMD12Z

Specifications

Continuous Collector Current

100mA

Collector Base Voltage Vcbo

50V

Pin Sayısı

6

Transistor Application

SWITCHING

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

Max Power Dissipation

350mW

Terminal Sayısı

6

RoHS Durumu

ROHS3 Compliant

Number Of Elements

2

Ambalaj

Tape & Reel (TR)

Resistor Base R1

47k Ω

Collector Emitter Voltage Vceo

50V

Montaj

Surface Mount

Max Breakdown Voltage

50V

Fabrika Tedarik Süresi

4 Weeks

Pin Sayısı

6

Resistor Emitter Base R2

47k Ω

Transition Frequency

230MHz

Yayın Yılı

2015

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 5V

Current Collector Cutoff Max

100nA ICBO

Maks. Çalışma Sıcaklığı

150°C

Hfemin

80

Case Connection

COLLECTOR

Emitter Base Voltage Vebo

10V

Frequency Transition

230MHz 180MHz

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Polarity

NPN, PNP

Collectoremitter Saturation Voltage

50V

Montaj Tipi

Surface Mount

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Gain Bandwidth Product

230MHz

Radyasyon Dayanımı

No

Min. Çalışma Sıcaklığı

-55°C

Collectoremitter Breakdown Voltage

50V

Kılıf / Paket

6-XFDFN Exposed Pad

Max Collector Current

100mA

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1