PQMD10Z

Specifications

Voltage Collector Emitter Breakdown Max

50V

Seri

Automotive, AEC-Q101

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 21

Kılıf / Paket

6-XFDFN Exposed Pad

Polaritychannel Type

NPN AND PNP

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Montaj Tipi

Surface Mount

Terminal Formu

NO LEAD

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Currentcollector Ic Max

100mA

Frequency Transition

230MHz 180MHz

Case Connection

COLLECTOR

Current Collector Cutoff Max

1μA

Dc Current Gain Hfe Min Ic Vce

100 @ 10mA 5V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Max

230mW

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Active

Transition Frequency

230MHz

Fabrika Tedarik Süresi

4 Weeks

Reference Standard

AEC-Q101; IEC-60134

Jesd30 Code

R-PDSO-N6

Resistor Emitter Base R2

47k Ω

Resistor Base R1

2.2k Ω

Number Of Elements

2

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

6

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

Pin Sayısı

6