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PMP5501G,115

Nexperia USA Inc.

PMP5501G,115

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.08
  • 500+ pcs$0.06
  • 1000+ pcs$0.05
  • 2000+ pcs$0.05

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Compliant

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Specifications

RoHS Durumu
RoHS Compliant
Terminal Sayısı
5
Max Power Dissipation
300mW
Vce Saturation Max Ib Ic
400mV @ 5mA, 100mA
ECCN Kodu
EAR99
Transistor Application
AMPLIFIER
Pin Sayısı
5
Collector Base Voltage Vcbo
50V
Çalışma Sıcaklığı
150°C TJ
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Obsolete
Yayın Yılı
2009
Transition Frequency
175MHz
Terminal Kaplaması
Tin (Sn)
Transistor Element Material
SILICON
Power Dissipation
300mW
Dc Current Gain Hfe Min Ic Vce
200 @ 2mA 5V
Frekans
175MHz
Tepe Reflow Süresi (maks. sn)
40
Ambalaj
Tape & Reel (TR)
Number Of Elements
2
Pin Sayısı
5
Fabrika Tedarik Süresi
6 Weeks
Max Breakdown Voltage
45V
Montaj
Surface Mount
Collector Emitter Voltage Vceo
45V
Terminal Formu
GULL WING
Polarity
PNP
Kurşunsuz
Lead Free
Montaj Tipi
Surface Mount
JESD-609 Kodu
e3
Case Connection
ISOLATED
Emitter Base Voltage Vebo
5V
Current Collector Cutoff Max
15nA ICBO
Temel Parça No
PMP5501
Tepe Reflow Sıcaklığı (°C)
260
Element Configuration
Dual
Max Collector Current
100mA
Gain Bandwidth Product
175MHz
Transistor Type
2 PNP (Dual) Matched Pair, Common Emitter

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