Volume pricing
- 1+ pcs$0.16
- 10+ pcs$0.15
- 100+ pcs$0.15
- 500+ pcs$0.14
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Power Dissipation
- 410mW
- Fabrika Tedarik Süresi
- 4 Weeks
- Tepe Reflow Süresi (maks. sn)
- 30
- HTS Kodu
- 8541.29.00.75
- Vgsth Max Id
- 1.5V @ 250μA
- Terminal Sayısı
- 6
- Terminal Kaplaması
- Tin (Sn)
- ECCN Kodu
- EAR99
- Pin Sayısı
- 6
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Seri
- TrenchMOS™
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Number Of Elements
- 2
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 1997
- Yüzey Montaj
- YES
- JESD-609 Kodu
- e3
- Parça Durumu
- Active
- Ds Breakdown Voltagemin
- 20V
- Fet Feature
- Logic Level Gate
- Terminal Formu
- GULL WING
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 860mA
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material
- SILICON
- Pin Sayısı
- 6
- Rds On Max Id Vgs
- 350m Ω @ 200mA, 4.5V
- Drain To Source Voltage Vdss
- 20V
- Drainsource On Resistancemax
- 0.35Ohm
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Input Capacitance Ciss Max Vds
- 34pF @ 20V
- Gate Charge Qg Max Vgs
- 0.72nC @ 4.5V
- Fet Type
- 2 N-Channel (Dual)
- Power Max
- 410mW
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