Volume pricing
- 1+ pcs$0.26
- 10+ pcs$0.25
- 100+ pcs$0.23
- 500+ pcs$0.22
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 870mA
- Drain Currentmax Abs Id
- 0.87A
- Pin Sayısı
- 6
- Transistor Element Material
- SILICON
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain To Source Voltage Vdss
- 20V
- Drainsource On Resistancemax
- 0.34Ohm
- Rds On Max Id Vgs
- 340m Ω @ 200mA, 4.5V
- Input Capacitance Ciss Max Vds
- 45pF @ 20V
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Power Max
- 400mW
- Gate Charge Qg Max Vgs
- 0.89nC @ 4.5V
- Fet Type
- 2 N-Channel (Dual)
- HTS Kodu
- 8541.29.00.75
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 4 Weeks
- Power Dissipation
- 400mW
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 1V @ 250μA
- Terminal Kaplaması
- Tin (Sn)
- Terminal Sayısı
- 6
- Pin Sayısı
- 6
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Seri
- TrenchMOS™
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 2
- Yayın Yılı
- 1997
- RoHS Durumu
- ROHS3 Compliant
- Ds Breakdown Voltagemin
- 20V
- Fet Feature
- Logic Level Gate
- JESD-609 Kodu
- e3
- Yüzey Montaj
- YES
- Parça Durumu
- Active
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