PMEG6010CEGWJ

Specifications

Diode Type

Schottky

Current Average Rectified Io

1A

Tepe Reflow Süresi (maks. sn)

30

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Diode Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Capacitance Vr F

60pF @ 1V 1MHz

Parça Durumu

Active

Seri

Automotive, AEC-Q101

Kılıf / Paket

SOD-123

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Operating Temperature Max

150°C

Current Reverse Leakage Vr

50μA @ 60V

Terminal Sayısı

2

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

4 Weeks

Terminal Pozisyonu

DUAL

Voltage Forward Vf Max If

660mV @ 1A

Montaj Tipi

Surface Mount

Terminal Kaplaması

Tin (Sn)

Configuration

SINGLE

Power Dissipation Max

0.41W

Tepe Reflow Sıcaklığı (°C)

260

Rep Pk Reverse Voltagemax

60V

Yüzey Montaj

YES

Voltage Dc Reverse Vr Max

60V

Jesd30 Code

R-PDSO-G2

Operating Temperature Junction

150°C Max

Reference Standard

AEC-Q101; IEC-60134

Output Currentmax

1A

Terminal Formu

GULL WING