Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 6
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Tin (Sn)
- Number Of Elements
- 2
- Turn On Delay Time
- 5.6 ns
- Input Capacitance Ciss Max Vds
- 21.3pF @ 10V
- Fet Feature
- Logic Level Gate
- Case Connection
- DRAIN
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 6
- Pin Sayısı
- 6
- Fall Time Typ
- 51 ns
- Yüzey Montaj
- YES
- Gate To Source Voltage Vgs
- 8V
- Rds On Max Id Vgs
- 620m Ω @ 600mA, 4.5V
- Turn Off Delay Time
- 19 ns
- Kurşunsuz
- Lead Free
- Max Power Dissipation
- 265mW
- Fet Type
- 2 N-Channel (Dual)
- Rise Time
- 9.2ns
- Yayın Yılı
- 2015
- Vgsth Max Id
- 950mV @ 250μA
- Seri
- TrenchFET®
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Gate Charge Qg Max Vgs
- 0.7nC @ 4.5V
- Continuous Drain Current Id
- 600mA
- Ambalaj
- Tape & Reel (TR)
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Max Dual Supply Voltage
- 20V
- Kılıf / Paket
- 6-XFDFN Exposed Pad
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Fabrika Tedarik Süresi
- 4 Weeks
- Power Max
- 265mW
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Parça Durumu
- Active
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