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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Input Capacitance Ciss Max Vds
- 87pF @ 10V
- Fet Feature
- Logic Level Gate
- Turn On Delay Time
- 18 ns
- Drain Currentmax Abs Id
- 0.55A
- Terminal Kaplaması
- Tin (Sn)
- Number Of Elements
- 2
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 6
- Turn Off Delay Time
- 80 ns
- Rds On Max Id Vgs
- 850m Ω @ 400mA, 4.5V
- Yüzey Montaj
- YES
- Gate To Source Voltage Vgs
- 8V
- Fall Time Typ
- 72 ns
- Pin Sayısı
- 6
- Drainsource On Resistancemax
- 0.85Ohm
- Pin Sayısı
- 6
- Terminal Formu
- FLAT
- Radyasyon Dayanımı
- No
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Drain To Source Voltage Vdss
- 20V
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Vgsth Max Id
- 1.3V @ 250μA
- Fet Type
- 2 P-Channel (Dual)
- Rise Time
- 30ns
- Yayın Yılı
- 2011
- Power Dissipation
- 390mW
- Kurşunsuz
- Lead Free
- Max Power Dissipation
- 330mW
- Parça Durumu
- Active
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fabrika Tedarik Süresi
- 4 Weeks
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Dual Supply Voltage
- -20V
- Kılıf / Paket
- SOT-563, SOT-666
- Ambalaj
- Tape & Reel (TR)
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