Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 2
- Terminal Kaplaması
- Tin (Sn)
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 6
- Operating Mode
- ENHANCEMENT MODE
- Fet Feature
- Logic Level Gate
- Input Capacitance Ciss Max Vds
- 83pF @ 10V
- Drain Currentmax Abs Id
- 0.8A
- Turn On Delay Time
- 6 ns
- Fall Time Typ
- 31 ns
- Drainsource On Resistancemax
- 0.38Ohm
- Pin Sayısı
- 6
- Terminal Formu
- FLAT
- Pin Sayısı
- 6
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 86 ns
- Rds On Max Id Vgs
- 380m Ω @ 500mA, 4.5V
- Gate To Source Voltage Vgs
- 8V
- Yüzey Montaj
- YES
- Vgsth Max Id
- 950mV @ 250μA
- Yayın Yılı
- 2011
- Drain To Source Breakdown Voltage
- 20V
- Fet Type
- 2 N-Channel (Dual)
- Rise Time
- 4ns
- Power Dissipation
- 390mW
- Max Power Dissipation
- 500mW
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e3
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Kılıf / Paket
- SOT-563, SOT-666
- Max Dual Supply Voltage
- 20V
- Ambalaj
- Tape & Reel (TR)
- Element Configuration
- Dual
- Continuous Drain Current Id
- 800mA
- Gate Charge Qg Max Vgs
- 0.68nC @ 4.5V
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 4 Weeks
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
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