Volume pricing
- 1+ pcs$0.14
- 10+ pcs$0.13
- 100+ pcs$0.12
- 500+ pcs$0.12
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 0.68nC @ 4.5V
- Continuous Drain Current Id
- 550mA
- Element Configuration
- Dual
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- SOT-563, SOT-666
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- ROHS3 Compliant
- Fabrika Tedarik Süresi
- 4 Weeks
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Parça Durumu
- Active
- Max Power Dissipation
- 500mW
- Kurşunsuz
- Lead Free
- Power Dissipation
- 330mW
- Rise Time
- 30ns
- Fet Type
- N and P-Channel
- Drain To Source Breakdown Voltage
- -20V
- Yayın Yılı
- 2011
- Vgsth Max Id
- 950mV @ 250μA
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Drain To Source Voltage Vdss
- 20V
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 6
- Terminal Formu
- FLAT
- Pin Sayısı
- 6
- Drainsource On Resistancemax
- 0.38Ohm
- Fall Time Typ
- 72 ns
- Yüzey Montaj
- YES
- Gate To Source Voltage Vgs
- 8V
- Rds On Max Id Vgs
- 380m Ω @ 500mA, 4.5V
- Terminal Sayısı
- 6
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Tin (Sn)
- Number Of Elements
- 2
- Drain Currentmax Abs Id
- 0.8A
- Input Capacitance Ciss Max Vds
- 83pF @ 10V
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