Volume pricing
- 1+ pcs$0.48
- 10+ pcs$0.45
- 100+ pcs$0.43
- 500+ pcs$0.40
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 8 Weeks
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Ambalaj
- Tape & Reel (TR)
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Continuous Drain Current Id
- 3.6A
- Gate Charge Qg Max Vgs
- 9.5nC @ 4.5V
- Kılıf / Paket
- 6-UDFN Exposed Pad
- Max Dual Supply Voltage
- -20V
- Drain To Source Voltage Vdss
- 20V
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e3
- Max Power Dissipation
- 515mW
- Vgsth Max Id
- 950mV @ 250μA
- Yayın Yılı
- 2012
- Rise Time
- 15ns
- Fet Type
- 2 P-Channel (Dual)
- Gate To Source Voltage Vgs
- 8V
- Yüzey Montaj
- YES
- Turn Off Delay Time
- 41 ns
- Rds On Max Id Vgs
- 67m Ω @ 2A, 4.5V
- Pin Sayısı
- 6
- Radyasyon Dayanımı
- No
- Pulsed Drain Currentmax Idm
- 14.4A
- Fall Time Typ
- 14 ns
- Pin Sayısı
- 6
- Case Connection
- DRAIN
- Fet Feature
- Logic Level Gate
- Input Capacitance Ciss Max Vds
- 804pF @ 10V
- Turn On Delay Time
- 7 ns
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 6
- Number Of Elements
- 2
- Terminal Kaplaması
- Tin (Sn)
- Transistor Application
- SWITCHING
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