PMDPB56XNEAX

Specifications

Gate Charge Qg Max Vgs

5nC @ 4.5V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

6-UDFN Exposed Pad

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

8 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Max

485mW Ta

Parça Durumu

Active

Reference Standard

AEC-Q101; IEC-60134

Fet Type

2 N-Channel (Dual)

Yayın Yılı

2016

Vgsth Max Id

1.25V @ 250μA

Drain To Source Voltage Vdss

30V

Montaj Tipi

Surface Mount

Terminal Formu

NO LEAD

Drainsource On Resistancemax

0.072Ohm

Yüzey Montaj

YES

Jesd30 Code

R-PDSO-N6

Ds Breakdown Voltagemin

30V

Rds On Max Id Vgs

72m Ω @ 3.1A, 4.5V

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Number Of Elements

2

Drain Currentmax Abs Id

3.1A

Input Capacitance Ciss Max Vds

256pF @ 15V

Fet Feature

Standard

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

3.1A Ta