Volume pricing
- 1+ pcs$0.25
- 10+ pcs$0.24
- 100+ pcs$0.22
- 500+ pcs$0.21
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Current Continuous Drain Id25
- 600mA 500mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tape & Reel (TR)
- Max Power Dissipation
- 265mW
- Parça Durumu
- Active
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Yayın Yılı
- 2015
- Radyasyon Dayanımı
- No
- Gate Charge Qg Max Vgs
- 0.7nC @ 4.5V
- Seri
- TrenchFET®
- Fabrika Tedarik Süresi
- 4 Weeks
- Continuous Drain Current Id
- 500mA
- Vgsth Max Id
- 950mV @ 250μA
- Ds Breakdown Voltagemin
- 20V
- Rds On Max Id Vgs
- 620m Ω @ 600mA, 4.5V
- Case Connection
- DRAIN
- Input Capacitance Ciss Max Vds
- 21.3pF @ 10V
- Montaj Tipi
- Surface Mount
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- RoHS Durumu
- ROHS3 Compliant
- Transistor Application
- SWITCHING
- Fet Type
- N and P-Channel Complementary
- Drain To Source Voltage Vdss
- 20V
- Pin Sayısı
- 6
- Fet Feature
- Logic Level Gate
- Yüzey Montaj
- YES
- Pin Sayısı
- 6
- Number Of Elements
- 2
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 6-XFDFN Exposed Pad
- Terminal Pozisyonu
- DUAL
- Terminal Sayısı
- 6
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 8V
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