Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 2
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Kılıf / Paket
- 6-XFDFN Exposed Pad
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 6
- Terminal Pozisyonu
- DUAL
- Power Max
- 380mW
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj Tipi
- Surface Mount
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fet Type
- N and P-Channel Complementary
- Transistor Application
- SWITCHING
- RoHS Durumu
- ROHS3 Compliant
- Terminal Formu
- NO LEAD
- Drain To Source Voltage Vdss
- 20V
- Reference Standard
- IEC-60134
- Pin Sayısı
- 6
- Fet Feature
- Standard
- Gate Charge Qg Max Vgs
- 0.7nC @ 4.5V
- Montaj
- Surface Mount
- Continuous Drain Current Id
- 600mA
- Fabrika Tedarik Süresi
- 4 Weeks
- Ds Breakdown Voltagemin
- 20V
- Vgsth Max Id
- 950mV @ 250μA
- Rds On Max Id Vgs
- 620m Ω @ 600mA, 4.5V
- Case Connection
- DRAIN
- Input Capacitance Ciss Max Vds
- 21.3pF @ 10V
- Operating Mode
- ENHANCEMENT MODE
- Jesd30 Code
- R-PDSO-N6
- Drainsource On Resistancemax
- 0.62Ohm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tape & Reel (TR)
- Drain Currentmax Abs Id
- 0.6A
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Max Power Dissipation
- 380mW
- Parça Durumu
- Active
- Yayın Yılı
- 2016
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