PMCXB900UELZ

Specifications

Number Of Elements

2

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Kılıf / Paket

6-XFDFN Exposed Pad

Transistor Element Material

SILICON

Terminal Sayısı

6

Terminal Pozisyonu

DUAL

Power Max

380mW

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Type

N and P-Channel Complementary

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Terminal Formu

NO LEAD

Drain To Source Voltage Vdss

20V

Reference Standard

IEC-60134

Pin Sayısı

6

Fet Feature

Standard

Gate Charge Qg Max Vgs

0.7nC @ 4.5V

Montaj

Surface Mount

Continuous Drain Current Id

600mA

Fabrika Tedarik Süresi

4 Weeks

Ds Breakdown Voltagemin

20V

Vgsth Max Id

950mV @ 250μA

Rds On Max Id Vgs

620m Ω @ 600mA, 4.5V

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

21.3pF @ 10V

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-N6

Drainsource On Resistancemax

0.62Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Drain Currentmax Abs Id

0.6A

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Max Power Dissipation

380mW

Parça Durumu

Active

Yayın Yılı

2016